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| product structure silicon monolithic integrated circuit this product is not designed prot ection against radioactive rays 1/21 datashee t tsz22111 ? 14 ? 001 ? 2012 rohm co., ltd. all rights reserved. tsz02201-0r2r0g100460-1-2 10.sep.2012 rev.001 www.rohm.com serial eeprom series standard eeprom microwire bus eeprom(3-wire) BU9888FV-W general description BU9888FV-W is a serial eeprom of serial 3-line interface method. features 256word16bits architecture 4k bit serial eeprom operating voltage range(3.0 v to 3.6v) write cycle time te/w=2ms(max ) address auto increment function at read action write mistake prevention function ? write prohibition at power on ? write prohibition by command code ? write mistake prevention function at low voltage program cycle auto delete and auto end function program condition display ready / busy low current consumption ? at write action(3.6v): icc1 = 3.5ma(max.) ? at read action(3.6v): icc2 = 2.0ma(max.) ? at standby action (3.6v): isb = 2.0 a(max.) data retention for 40 years data rewrite up to 100,000 times data at shipment all addresses ffffh package w(typ.) x d(typ.) x h(max.) absolute maximum ratings (ta=25 ) parameter symbol ratings unit remarks supply voltage v cc -0.3 to +6.5 v power dissipation pd 300 mw degradation is done at 3.0mw/ for operation above 25 storage temperature tstg -65 to +125 operating temper ature topr -20 to +85 terminal voltage -0.3 to v cc +0.3 v the max value of terminal voltage is not over 6.5v memory cell characteristics (ta=25 , v cc = 3.0 v to 3.6v) parameter limits unit min. typ. max. erase/write cycle *1 100,000 cycles data retention *1 40 years *1 not 100 tested recommended operating ratings parameter symbol ratings unit supply voltage v cc 3.0 to 3.6 v input voltage vin 0 to v cc ssop-b8 3 . 00 mm x 6 .4 0 mm x 1. 35 mm downloaded from: http:///
2/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 electrical characteristics -dc operating (unless otherwise specified ta=-20 to +85 , v cc =3.0 v to 3.6v) parameter symbol limits unit test condition min. typ. max. "l" input voltage vil -0.3 0.2v cc v "h" input voltage vih 0.8v cc v cc +0.3 v "l" output voltage vol 0 0.4 v iol=2.1ma "h" output voltage voh 2.4 v cc v ioh=-0.4ma input leakage current ili -1 1 a vin=0 to v cc output leakage current ilo -1 1 a vout=0 to v cc , cs=0v operating current icc1 3.5 ma fsk=2mhz, te/w=2ms(write), test1=vcc icc2 2.0 ma fsk=2mhz, (read), test1=v cc standby current isb 2.0 a cs=0v, test1=v cc , do=open electrical characteristics -ac operating (ta=-20 to +85 , vcc = 3.0 v to 3.6v) parameter symbol limits unit min. typ. max. sk clock frequency fsk 2 mhz sk high time tskh 230 ns sk low time tskl 230 ns cs low time tcs 200 ns cs setup time tcss 200 ns di setup time tdis 100 ns cs hold time tcsh 0 ns di hold time tdih 100 ns data "1" output delay time tpd1 200 ns data "0" output delay time tpd0 200 ns cs to status valid tsv 150 ns cs to output high-z tdf 150 ns write cycle time te/w 2 ms sync data input / output timing data is taken by di in sync with the rise of sk. at read action, data is output from do in sync with the rise of sk. the status signal at write (ready / busy ) is output after tcs from the fall of cs after write command input, at the area do where cs is h, and valid until the next command start bit is input. and, while cs is l, do becomes high-z. after completion of each mode execution, set cs l once fo r internal circuit reset, and execute the following action mode. figure 1. sync data input / output timing cs sk do(read) di do(write) tcss tskh tskl tcsh tdis tdih tpd1 tpd0 tdf status valid downloaded from: http:/// 3/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 block diagram pin configuration pin descriptions pin name i / o function cs input chip select input sk input serial clock input di input serial data input do output serial data output test1 input test pin. please connect to power. test2 - test pin. please open at using. vcc - power source gnd - all input / output reference voltage, 0v vcc test1 test2 gnd cs sk di do BU9888FV-W: ssop-b8 top view command decode control clock generation cs sk power source voltage detection write prohibition hi g h vo l tage occurrence command register di address buffer data register do address decoder r/w amplifier 8bit 16bit 8bit 16bit 4,096bit eeprom dummy bit downloaded from: http:/// 4/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 figure 3. l input voltage v il (cs,sk,di) figure 5. h output voltage v oh -i oh (vcc=3.0v) typical performance curves (the following characteristic data are typ. values.) figure 2. h input voltage v ih (cs,sk,di) figure 4. l output voltage v ol -i ol (vcc=3.0v) downloaded from: http:/// 5/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 figure 9. consumption current at read action l cc 2(f sk =2mhz) typical performance curves \ continued figure 7. output leak current i lo (do) figure 8. current consumption at write action l cc 1(f sk =2mhz) figure 6. input leak current i li (cs,sk.di) downloaded from: http:/// 6/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 figure 13. sk low time t skl typical performance curves \ continued figure 11. sk frequency f sk figure 12. sk high time t skh figure 10. consumption current at standby action i sb downloaded from: http:/// 7/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 figure 17. di setup time t dis typical performance curves \ continued figure 15. cs setup time t css figure 14. cs low time t cs figure 16. di hold time t dih downloaded from: http:/// 8/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 figure 21. time from cs to high-z t df typical performance curves \ continued figure 19. data 1 output delay time t pd1 figure 20. time from cs to output establishment t sv figure 18. data 0 output delay time t pd0 downloaded from: http:/// 9/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 typical performance curves \ continued figure 22. write cycle time t e/w downloaded from: http:/// 10/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 command mode command start bit ope code address data read (read) (*1) 1 10 a7, a6, a5, a4, a3, a2,a1, a0 d15 to d0(read data) write enable (wen) 1 00 1 1 write (write) (*2) 1 01 a7, a6, a5, a4, a3, a2, a1, a0 d15 to d0(write data) write disable (wds) 1 00 0 0 ? input the address and the data in msb first manners. ? as for , input either vih or vil. *start bit acceptance of all the commands of this ic starts at recognition of the start bit. the start bit means the first 1 input after the rise of cs. *1 as for read, by continuous sk clock input after setti ng the read command, data output of the set address starts, and address data in significant order are sequentially output continuously. (auto increment function) *2 when the read and the write all commands are executed, data written in the selected memory cell is automatically deleted, and input data is written. timing chart 1. read cycle (read) figure 23. read cycle ( 1) start bit when data 1 is input for the first time after the rise of cs, this is recognized as a start bit. and when 1 is input after plural 0 are input, it is recognized as a start bit, and the following operation is started. this is common to all the commands to described hereafter. when the read command is recognized, input address data (16bit) is output to serial. and at that moment, at taking a0, in sync with the rise of sk, 0 (dummy bit) is output. and, the following data is output in sy nc with the rise of sk. this ic has an address auto increment function valid only at read command. this is the function where after the above read execution, by continuously inputting sk clock, the above address data is read sequentially. and, during the auto increment, keep cs at h. 2. write cycle (write) in this command, input 16bit data (d15 to d0) are written to designated addresses (a7 to a0). the actual write starts by the fall of cs of d0 taken sk clock. when status is not de tected, (cs=l fixed) max. 2ms in conformity with te/w, and when status is detected (cs=h), all comm ands are not accepted for areas where l ( busy ) is output from d0, therefore, do not input any command. figure 24. write cycle ( 2 next address data(auto increment function) - k o t - t k o t downloaded from: http:/// 11/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 3. write enable (wen) at power on, this ic is in write disable status by the internal reset circuit. before executing the write command, it is necessary to execute the write enable comm and. and, once this command is executed, it is valid unitl the write disable command is executed or the power is turned off. however, the read command is valid irre spective of write enable / diable command. input to sk after 8 clocks of this command is available by either h or l, but be sure to input it. 4. write disable (wds) cycle when the write enable command is executed after power on, write enable status gets in. when the write disable command is executed then, the ic gets in write disable status as same as at power on, and then the write command is canceled thereafter in software manner. however, the r ead command is executable. in write enable status, even when the write command is input by mistake, wr ite is started. to prevent such a mistake, it is recommended to execute the write disable command after completion of write. input to sk af ter 8 clocks of this command is available by either h or l, but be sure to input it. figure 25. write enable (wen) cycle figure 26. write disable (wds) cycle - k o - o k downloaded from: http:/// 12/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 application 1) method to cancel each command read start bit ope code address data write start bit ope code address data te/w 2) at standby standby current when cs is l, sk input is l, di input is h, and ev en with middle electric potentia l, current does not increase. timing as shown in figure 29 , when sk at standby is h, if cs is started, di status may be read at the rise edge. at standby and at power on/off, when to start cs, set sk input or di input to l status. (refer to figure 30 ) figure 27. read cancel available timing a b 1bit 2bit 8bit 16bit sk ? 27 rise of clock d1 enlarged figure d0 di 26 27 a:from start bit to 27 clock rise cancel by cs=l b:27 clock rise and after cancellation is not available by any means. if vcc is made off in this area, designated address data is not guaranteed, therefore write once again. and when sk clock is input continuously, cancellation is not available. cs sk di start bit input cs=sk=di=h wrong recognition as a start bit cs sk di start bit input cs=sk=di=h wrong recognition as a start bit figure 29. wrong action timing figure 30. normal action timing figure 28. write cancel available timing 1bit 2bit 8bit 16bit cancel is available in all areas in read mode. ? method to cancel:cancel by cs=l downloaded from: http:/// 13/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 3) equivalent circuit 4) i/o peripheral circuit 4-1) pull down cs. by making cs=l at power on/off, mistake in operation and mistake write are prevented. pull down resistance rpd of cs pin to prevent mistake in operation and mistake write at power on/off, cs pull down resistance is necessary. select an appropriate value to this resistance value from microcontroller voh, ioh, and vil characteristics of this ic. output circuit do oeint. input circuit cs csint. reset int. input circuit di cs int. sk input circuit test1 vdd figure 31. output circuit (do) figure 32. input circuit (cs) figure 33. input circuit (sk,di) figure 34. input circuit (test1) microcontroller vohm h output iohm rpd vihe l input eeprom figure 35. cs pull down resistance vohm iohm rpd ??? 2.4 2 10 -3 rpd 1.2 [k ] vohm vihe ??? rpd example) when v cc =5v, vihe=2v, vohm=2.4v, iohm=2ma, from the equation , ? vihe ? vohm ? iohm with the value of rpd to satisfy the above equation, vohm becomes 2.4v or higher, and vihe (=2.0v), the equation is also satisfied. : eeprom vih specifications : microcontroller voh specifications : microcontroller ioh specifications downloaded from: http:/// 14/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 4-2) do is available in both pull up and pull down. do output become high-z in other ready / busy output timing than after data output at read command and write command. when malfunction occurs at high-z input of the microcontroller port connected to do, it is necessary to pull down and pull up do. when there is no in fluence upon the microcontroller actions, do may be open. if do is open, and at timing to output status ready, at timing of cs=h, sk=h, di=h, eeprom recognizes this as a start bit, resets ready output, and do=high-z, therefore, ready signal c annot be detected. to avoid such output, pull up do pin for improvement. figure 36. ready output timing at do=open pull up resistance rpu and pull down resistance rpd of do pin as for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller vih, vil, and voh, ioh, vol, iol characteristics of this ic. cs sk di do d0 busy ready high-z enlarged cs sk di do busy high-z improvement by do pull up busy ready cs=sk=di=h when do=open cs=sk=di=h when do=pull up do h microcontroller vilm l input iole vole l output eeprom rpu figure 37. do pull up resistance rpu ??? rpu 2.2 [k ] vole vilm ??? rpu example) when v cc =5v , vole=0.4v, iole=2.1ma, vilm=0.8v, from the equation , with the value of rpu to satisfy the above equation, vole becomes 0.4v or below, and with vilm(=0.8v), the equation is also satisfied. : eeprom vol specifications : eeprom iol specifications : microcontroller vil specifications ? vole ? iole ? vilm rpd ??? rpd 48 [k ] vohe vihm ??? rpd example) when v cc =5v , vohe=vcc 0.2v, iohe=0.1ma, vihm=vcc 0.7v from the equation , vohe iohe with the value of rpd to satisfy the above equation, vohe becomes 2.4v or below, and with vihm (=3.5v), the equation is also satisfied. : eeprom voh specifications : eeprom ioh specifications : microcontroller vih specifications ? vohe ? iohe ? vihm 5 0.2 0.1 10 -3 microcontroller vihm h input iohe vohe h output eeprom rpd figure 38. do pull down resistance vcc-vole iole 5-0.4 2.1 10 -3 downloaded from: http:/// 15/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 5) ready / busy status display (do terminal) (common to br93l46-w / a46-wm,br93l56-w / a56-wm, br93l66-w / a66-wm, br93l76-w / a76-wm, br93l86-w / a86-wm) this display outputs the internal status signal. when cs is started after tcs (min.200ns) from cs fall after write command input, h or l is output. b/r display =l ( busy ) = write under execution after the timer circuit in the ic works and creates the per iod of te/w, this time circ uit completes au tomatically. and write to the memory cell is made in the period of te /w, and during this period, other command is not accepted. b/r display = h (ready) = command wait status even after te/w (max.5ms) from write of the me mory cell, the following command is accepted. therefore, cs=h in the period of te/w , and when input is in sk, di, malfunction may occur, therefore, di=l in the area cs=h. (especially, in the case of s hared input port, attention is required.) * do not input any command while status signal is output. command input in busy area is cancelled, but command input in ready area is accepted. therefore, status ready output is cancelled, and malfunction and mistake write may be made. 6) when to directly connect di and do this ic has independent input terminal di and output terminal do, and separate signals are handled on timing chart, meanwhile, by inserting a resistance r between these di and do terminals, it is possible to carry out control by 1 control line. cs high-z sk di do clock write instruction ready busy status (do status (do status t sv figure 39. b/r status output timing chart microcontroller di/o port di eeprom do r figure 40. di, do control line common connection downloaded from: http:/// 16/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 data collision of microcontroller di/o output and do output and feedback of do output to di input. drive from the microcontroller di/o out put to di input on i/o timing, and signal output from do output occur at the same time in the following points. (1) 1 clock cycle to take in a0 address data at read command dummy bit 0 is output to do terminal. when address data a0 = 1 input, through current route occurs. (2) timing of cs = h after write command. do terminal in ready / busy function output. when the next start bit input is recognized, high-z gets in. especially, at command input after write, when cs input is started with microcontroller di/o output l, ready output h is output from do te rminal, and through current route occurs. feedback input at timing of these (1) and (2) does not cause di sorder in basic operations, if resistance r is inserted. note) as for the case (2), attenti on must be paid to the following. when status ready is output, do and di are shared, di=h and the micr ocontroller di/o=high-z or the microcontroller di/o=h,if sk clock is input, do output is input to di and is recognized as a start bit, and malfunction may occur. as a method to avoid malfunction, at status ready output, set sk=l, or start cs within 4 clocks after h of ready signal is output. eeprom cs input eeprom sk input eeprom di input eeprom do output microcontroller di/o port a1 high-z collision of di input and do output h a0 0 d15 d14 d13 a1 a0 high-z microcontroller output microcontroller input figure 41. collision timing at read data output at di, do direct connection eeprom cs input eeprom sk input eeprom di input eeprom do output microcontroller di/o port write command microcontroller output busy busy ready ready ready collision of di input and do output hig h-z write command write command write command write command microcontroller input microcontroller output figure 42. collision timing at di, do direct connection cs sk di do ready high-z start bit because di=h, set sk=l at cs rise. figure 43. start bit input timing at di, do direct connection downloaded from: http:/// 17/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 selection of resistance value r the resistance r becomes through current limit resistance at data collision. when through current flows, noises of power source line and instantaneous stop of power source may o ccur. when allowable through current is defined as i, the following relation should be satisfied. determine allowable curr ent amount in consideration of impedance and so forth of power source line in set. and insert resistance r, and set t he value r to satisfy eeprom input level vih/vil even under influence of voltage decline owing to leak current and so fo rth. insertion of r will not cause any influence upon basic operations. (1) address data a0 = 1 input, dummy bit 0 output timing (when microcontroller di/o output is h, eepr om do outputs l, and h is input to di) ? make the through current to eeprom 10ma or below. ? see to it that the level vih of eeprom should satisfy the following. (2) do status ready output timing (when the microcontroller di/o is l, eeprom do output h, and l is input to di) ? set the eeprom input level vil so as to satisfy the following. microcontroller di/o port di eeprom do r h output iohm vohm vole l output figure 44. circuit at di, do direct connection (microcontroller di/o h output, eeprom l output) conditions vohm vihe vohm iohm r + vole at this moment, if vole=0v, vohm iohm r r ??? vohm iohm microcontroller di/o port di eeprom do r l output iohm volm vohe h output conditions volm vile volm vohe C iolm r as this moment, vohe=vcc volm vcc C iolm r ??? vcc C volm iolm figure 45. circuit at di, do direct connection (mi crocontroller di/o l output, eeprom h output) example) when vcc=5v, vohm=5v, iohm=0.4ma, volm=5v, iolm=0.4ma, from the equation , from the equation , r r vohm iohm 5 0.4 10 -3 r 12.5 [k ? ] ??? r r vcc C volm iolm 5 C 0.4 2.1 10 -3 r 2.2 [k ? ] ??? therefore, from the equations and , r 12.5 [k ? ] : eeprom vih specifications : eeprom vol specifications : microcontroller voh specifications : microcontroller ioh specifications ? vihe ? vole ? vohm ? iohm : eeprom vil specifications : eeprom voh specifications : microcontroller vol specifications : microcontroller iol specifications ? vile ? vohe ? volm ? iolm r downloaded from: http:/// 18/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 7) notes on power on/off ? at power on/off, set cs l. when cs is h, this ic gets in input accept status (active). if power is turned on in this status, noises and the likes may cause malfunction, mistake write or so. to prevent these, at power on, set cs l . (when cs is in l status, all inputs are cancelled.) and at power decline, owing to power line capaci ty and so forth, low power status may continue long. at this case too, owing to the same reason, malfunction, mist ake write may occur, therefore, at power off too, set cs l. por citcuit this ic has a por (power on reset) circuit as a mistak e write countermeasure. after por action, it gets in write disable status. the por circuit is valid only when power is on, and does not work when power is off. however, if cs is h at power on/off, it may become write enable status owing to noises and the likes. for secure actions, observe the follwing conditions. 1. set cs=l 2. turn on power so as to satisfy the recommended conditions of t r , t off , vbot for por circuit action. lvcc circuit lvcc (v cc -lockout) circuit prevents data rewrite action at low power, and prevents wrong write. at lvcc voltage (typ.=1.2v) or below, it prevent data rewrite. 8) noise countermeasures v cc noise (bypass capacitor) when noise or surge gets in the power source line, malfunc tion may occur, therefore, for removing these, it is recommended to attach a bypass capacitor (0.1 f) between ic v cc and gnd, at that moment, at tach it as close to ic as possible.and, it is also recommended to attach a bypass capacitor between board v cc and gnd. sk noise when the rise time (t r ) of sk is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement. to avoid this, a sc hmitt trigger circuit is built in sk input. the hysteresis width of this circuit is set about 0.2v, if noises exist at sk input, set the noise am plitude 0.2vp-p or below. and it is recommended to set the rise time (t r ) of sk 100ns or below. in the case when the rise time is 100ns or higher, take sufficient noise countermeasures. make the clock rise, fall time as small as possible. t r t off vbot 10ms or below 10ms or higher 0.3v or below 100ms or below 10ms or higher 0.2v or below t off t r vbot 0 v cc figure 46. timing at power on/off figure 47. rise waveform diagram (bad example cs pin is pulled up to vcc. in this case, cs becomes h (active st atus), and eeprom may have malfunction, mistake write owing to noise and the likes. even when cs in p ut is hi g h-z , the status becomes like this case , which p lease note. (good example it is l at power on/off. set 10ms or higher to recharge at power off. when power is turned on without observing this condition, ic internal circuit may not be reset, which please note. recommended conditions of t r , t off , vbot v cc gnd v cc gnd v cc cs bad example good example downloaded from: http:/// 19/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 notes for use (1) described numeric values and data are design repr esentative values, and the values are not guaranteed. (2) we believe that application circuit examples are recommendabl e, however, in actual use, confirm characteristics further sufficiently. in the case of use by changing the fixed number of external parts, make your decision with sufficient margin in consideration of static characteristics and transition characteristics and fluct uations of external parts and our lsi. (3) absolute maximum ratings if the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded, lsi may be destructed. do not impress voltage and temperature exceeding the absolute maximum ratings. in the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to lsi. (4) gnd electric potential set the voltage of gnd terminal lowest at any action condition. make sure that each terminal voltage is not lower than that of gnd terminal in consid eration of transition status. (5) heat design in consideration of allowable loss in actual use cond ition, carry out heat design with sufficient margin. (6) terminal to terminal short-circuit and wrong packaging when to package lsi onto a board, pay su fficient attention to lsi direction and displacement. wrong packaging may destruct lsi. and in the case of short-circuit between lsi terminals and terminals and power source, terminal and gnd owing to foreign matter, lsi may be destructed. (7) use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficient. status of this document the japanese version of this document is fo rmal specification. a customer may use this translation version only for a reference to help reading the formal version. if there are any differences in translation version of this document formal version takes priority. downloaded from: http:/// 20/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 ? order quantity needs to be multiple of the minimum quantity. 21/21 datasheet datasheet BU9888FV-W ? 2012 rohm co., ltd. all rights reserved. www.rohm.com tsz22111 ? 15 ? 001 10.sep.2012 rev.001 tsz02201-0r2r0g100460-1-2 revision history date revision changes 10.sep.2012 001 new release downloaded from: http:/// datasheet d a t a s h e e t notice - ge rev.002 ? 2014 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. our products are designed and manufac tured for application in ordinary elec tronic equipments (such as av equipment, oa equipment, telecommunication equipment, home electroni c appliances, amusement equipment, etc.). if you intend to use our products in devices requiring ex tremely high reliability (such as medical equipment (note 1) , transport equipment, traffic equipment, aircraft/spacecra ft, nuclear power controllers, fuel c ontrollers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (specific applications), please consult with the rohm sale s representative in advance. unless otherwise agreed in writing by rohm in advance, rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ro hms products for specific applications. (note1) medical equipment classification of the specific applications japan usa eu china class class class b class class class 2. rohm designs and manufactures its products subject to strict quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe desi gn against the physical injury, damage to any property, which a failure or malfunction of our products may cause. the following are examples of safety measures: [a] installation of protection circuits or other protective devices to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditio ns, as exemplified below. accordin gly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of an y rohms products under any special or extraordinary environments or conditions. if you intend to use our products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] use of our products in any types of liquid, incl uding water, oils, chemicals, and organic solvents [b] use of our products outdoors or in places where the products are exposed to direct sunlight or dust [c] use of our products in places where the products ar e exposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the products are exposed to static electricity or electromagnetic waves [e] use of our products in proximity to heat-producing components, plastic cords, or other flammable items [f] sealing or coating our products with resin or other coating materials [g] use of our products without cleaning residue of flux (ev en if you use no-clean type fluxes, cleaning residue of flux is recommended); or washing our products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] use of the products in places subject to dew condensation 4. the products are not subjec t to radiation-proof design. 5. please verify and confirm characteristics of the final or mounted products in using the products. 6. in particular, if a transient load (a large amount of load applied in a short per iod of time, such as pulse. is applied, confirmation of performance characteristics after on-boar d mounting is strongly recomm ended. avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading c ondition may negatively affect product performance and reliability. 7. de-rate power dissipation (pd) depending on ambient temper ature (ta). when used in seal ed area, confirm the actual ambient temperature. 8. confirm that operation temperat ure is within the specified range described in the product specification. 9. rohm shall not be in any way responsible or liable for fa ilure induced under deviant condi tion from what is defined in this document. precaution for mounting / circuit board design 1. when a highly active halogenous (chlori ne, bromine, etc.) flux is used, the resi due of flux may negatively affect product performance and reliability. 2. in principle, the reflow soldering method must be used; if flow soldering met hod is preferred, please consult with the rohm representative in advance. for details, please refer to rohm mounting specification downloaded from: http:/// datasheet d a t a s h e e t notice - ge rev.002 ? 2014 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, pl ease allow a sufficient margin considering variations of the characteristics of the products and external components, including transient characteri stics, as well as static characteristics. 2. you agree that application notes, re ference designs, and associated data and in formation contained in this document are presented only as guidance for products use. theref ore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. precaution for electrostatic this product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. please take proper caution in your manufacturing process and storage so that voltage exceeding t he products maximum rating will not be applied to products. please take special care under dry condit ion (e.g. grounding of human body / equipment / solder iron, isolation from charged objects, se tting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriora te if the products are stor ed in the places where: [a] the products are exposed to sea winds or corros ive gases, including cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to di rect sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage c ondition, solderability of products out of recommended storage time period may be degraded. it is strongly recommended to confirm sol derability before using products of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the co rrect direction, which is indicated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. use products within the specified time after opening a humidity barrier bag. baking is required before using products of which storage time is exceeding the recommended storage time period. precaution for product label qr code printed on rohm products label is for rohms internal use only. precaution for disposition when disposing products please dispose them proper ly using an authorized industry waste company. precaution for foreign exchange and foreign trade act since our products might fall under cont rolled goods prescribed by the applicable foreign exchange and foreign trade act, please consult with rohm representative in case of export. precaution regarding intellectual property rights 1. all information and data including but not limited to application example contained in this document is for reference only. rohm does not warrant that foregoi ng information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. rohm shall not be in any way responsible or liable for infringement of any intellectual property rights or ot her damages arising from use of such information or data.: 2. no license, expressly or implied, is granted hereby under any intellectual property rights or other rights of rohm or any third parties with respect to the information contained in this document. other precaution 1. this document may not be reprinted or reproduced, in whol e or in part, without prior written consent of rohm. 2. the products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of rohm. 3. in no event shall you use in any wa y whatsoever the products and the related technical information contained in the products or this document for any military purposes, incl uding but not limited to, the development of mass-destruction weapons. 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties. downloaded from: http:/// datasheet datasheet notice C we rev.001 ? 2014 rohm co., ltd. all rights reserved. general precaution 1. before you use our pro ducts, you are requested to care fully read this document and fully understand its contents. rohm shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny rohms products against warning, caution or note contained in this document. 2. all information contained in this docume nt is current as of the issuing date and subj ec t to change without any prior notice. before purchasing or using rohms products, please confirm the la test information with a rohm sale s representative. 3. the information contained in this doc ument is provi ded on an as is basis and rohm does not warrant that all information contained in this document is accurate an d/or error-free. rohm shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. downloaded from: http:/// |
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